SEM-EDX research

We offer research in the following areas:

• Morphology and topography of the surface of different materials (including nanostructured materials).
• Analyses of cross-sections of different materials (without preparatory procedures).
• Analyses of solder joints, the quality of solders and intermetallic compounds in solders, as well as paths in printed circuits.
• Performance of qualitative and quantitative analysis of the samples provided.
• Testing the elemental composition in selected micro areas.
• Testing changes in element concentration along a given line of analysis.
• Testing the elements distribution in the area under analysis (map of elements).

Our research equipment:

The microscope JEOL JSM-7600F is a high-resolution instrument of the latest generation, digitally controlled and equipped with an electron gun with field emission (Schottky type), which enables testing of the morphology of the surface of solids on a micro and nanometre scale. The microscope is equipped with 2 detectors for secondary electrons and 2 detectors for backscattered electrons (typical semi-conductor detector BSE and low angle backscattered electron (LABE) detector), which enable imaging of atomic contrast and differences in material density with high sensitivity. The microscope is coupled with an energy dispersion X-ray (EDX) spectrometer which enable quick analysis of the elemental compositions in solids.

The microscope is used for testing the morphology and topography of nanostructured carbon layers with added nanocrystals of transition metals and carbon nanotubes as well as for testing new materials and the results of modifications of their surface at the nano-level. The microscope is also used for solder joints, the quality of solders and intermetallic compounds in solders as well as paths in printed circuits where the scanning electron microscope with the X-ray microanalysis (EDX) module enables quick performance of qualitative and quantitative analyses.

Basic parameters of microscope:

• accelerating voltage: from 0.1kV to 30kV
• resolution: 1.0nm (at accelerating voltage 15kV), 1.5nm (at accelerating voltage 1kV)
• range of magnification: from 25x to 1,000,000x
• probe current (through aperture) – 10^-13 ÷ 2x 10^-7A
• beam current stability – below 1%/8h
• specimen stage: fully eucentric goniometer stage, computer-controlled 5-axis

Basic parameters of the EDX spectrometer:

• X-Max^N detector type SDD (Silicon Drift Detector) from Oxford Instrument with
  150 mm² of active area;
• resolution - 129 eV (specified for the Mn Kα line);
• detection of elements with the atomic number Z ≥ 5 (boron and higher);
• qualitative and quantitative analysis of the elemental composition – collection of spectra of the selected point, along the set line or area on the sample;
• testing the elements distribution in the sample in the form of maps coupled with the microscopic image.

SEM images of nanostructured carbonaceous layers

K-Fe-Se-Ocalloy surface, EDX spectrum and maps of elements